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Failure Analysis Equipment Product List

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The state of analysis techniques, starting with the failure analysis of bonding, adhesion, and assembly parts.

Introducing the perspectives from which analysis and analytical techniques should be advanced!

Our company supports customers in solving their challenges and problems not only with electronic components but also with a wide range of products, parts, and materials, including inorganic and organic materials, through failure analysis, defect analysis, structural analysis, and reliability evaluation. This document introduces how to approach analysis and evaluation techniques from various perspectives. We hope it serves as a starting point and a helpful resource for our customers in resolving issues. [Contents] ■ Introduction ■ Image of Joining and Positioning of Our Evaluation and Analysis Techniques ■ Causes of Defects ■ Methods ■ Conclusion *For more details, please refer to the PDF document or feel free to contact us.

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Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for Analysis - Backside Polishing - Supports various sample forms. Si chip size: 200um to 15mm square ■ Defective Area Identification - Backside IR-OBIRCH Analysis / Backside Emission Analysis - IR-OBIRCH Analysis: Supports up to 100mA/10V and 100uA/25V Emission Analysis: Supports up to 2kV * Covers a wide range of defect characteristics such as low-resistance shorts, micro-leaks, and high-voltage breakdown failures. ■ Pinpoint Cross-Section Observation of Leak Areas - SEM/TEM - Select SEM or TEM observation based on the predicted defects, allowing for pinpoint physical observation and elemental analysis of leak defect areas.

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Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device that has less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, damage to the SiO2 film and the SiC crystal was noted. *For more details, please refer to the PDF document or feel free to contact us.

  • Other analytical equipment
  • Failure Analysis Equipment

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